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| SMD Type MOSFET Dual N-Channel High Density Trench MOSFET KI8205T Unit: mm Features Super high dense cell trench design for low RDS(on). Rugged and reliable. Surface Mount package. 1 pin mark D1 D2 S1 D1/D2 1 2 3 6 5 4 G1 D1/D2 G2 G1 S1 G2 S2 S2 Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TA = 25 -Pulse *2 Drain-Source Diode Forward Current *1 Maximum Power Dissipation TA=25 TA=75 Operating Junction and Storage Temperature Range Thermal Resistance,Junction-to-Ambient *1 Surface Mounted on FR4 Board , t 10sec . TJ,TSTG RthJA *1 *1 Symbol VDS VGS ID IDM IS PD Rating 20 12 4.3 21.5 1.7 1.25 0.75 - 55 to 150 100 /W Unit V V A A A W *2 Pulse width limited by maximum junction temperature. www.kexin.com.cn 1 SMD Type MOSFET Dual N-Channel High Density Trench MOSFET KI8205T Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage *1 Drain-Source On-State Resistance *1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Rise Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode Forward Voltage *1 Pulse width 300 s , Duty Cycle 2% . Symbol VDSS IDSS IGSS VGS(th) RDS(on) CISS COSS CRSS td(on) tr td(off) tf Qg Qgs Qgd VSD VGS = 0V , IS = 1.7A *1 VDS = 10V , ID = 3A,VGS = 4.5V VDD = 10V , ID = 1A VGEN = 4.5V RL = 10 RGEN = 6 VDS = 8V , VGS = 0V,f = 1.0MHz Testconditons VGS = 0V , ID = 250 A Min 20 1 100 0.6 0.9 25 34 550 164 138 10 8.2 25 6.7 6.2 1.8 1.5 1.2 ns ns ns ns nC nC nC V pF 1.5 30 46 Typ Max Unit V A nA V m VGS = 20V , VDS = 0V VDS = 12V , VGS = 0V VDS = VGS , ID = 250uA VGS = 4V , ID = 4.3A VGS = 2.5V , ID = 3.4A www.kexin.com.cn 2 |
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